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 JMnic
Product Specification
Silicon PNP Power Transistors
2SB1194
DESCRIPTION With TO-220Fa package High DC current gain High speed switching DARLINGTON Complement to type 2SD1633 APPLICATIONS For power switching applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector -emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ae ae Open emitter Open base Open collector CONDITIONS VALUE -100 -100 -7 -5 -8 -0.5 2 W UNIT V V V A A A
JMnic
Product Specification
Silicon PNP Power Transistors
2SB1194
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-0.2A; RBE= IC=-3A ;IB=-3mA IC=-3A ;IB=-3mA VCB=-100V; IE=0 VCE=-100V; IB=0 VEB=-7V; IC=0 IC=-3A ; VCE=-3V 1500 MIN -100 -1.5 -2.0 -100 -100 -5 10000 |I |I TYP. MAX UNIT V V V A A mA
SYMBOL VCEO(SUS) VCEsat VBEsat ICBO ICEO IEBO hFE
Switching times ton tstg tf Turn-on time Storage time Fall time IC=-3A ;IB1=-IB2=-3mA VCC=-50V 3.0 5.0 3.0 |I |I |I s s s
hFE Classifications Q 1500-6000 P 4000-10000
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SB1194
Fig.2 Outline dimensions (unindicated tolerance: A
0.15 mm)
3


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